Semiconductor light emitting device and method for manufacturing the same

ABSTRACT

A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2012-068462, filed on Mar. 23,2012; the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor lightemitting device and a method for manufacturing the same.

BACKGROUND

Semiconductor light emitting devices such as light emitting diodes(LEDs) and the like have been developed using nitride semiconductors.Also, semiconductor light emitting devices that emit white light havebeen developed by, for example, combining an LED that emits blue lightand a phosphor that absorbs blue light and emits yellow light. Insemiconductor light emitting devices of this type, increases inreliability are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating a semiconductorlight emitting device according to a first embodiment;

FIG. 2A to FIG. 2C are schematic cross-sectional views illustrating amanufacturing method for a semiconductor light emitting device accordingto the first embodiment;

FIG. 3A to FIG. 3C are schematic cross-sectional views illustrating amanufacturing method for a semiconductor light emitting device accordingto the first embodiment;

FIG. 4A to FIG. 4D are schematic cross-sectional views illustrating amanufacturing method for a semiconductor light emitting device accordingto the first embodiment;

FIG. 5 is a flowchart illustrating the method for manufacturing asemiconductor light emitting device according to the first embodiment;

FIG. 6A and FIG. 6B are schematic views illustrating a semiconductorlight emitting device according to a second embodiment;

FIG. 7A and FIG. 7B are schematic views illustrating the method formanufacturing a semiconductor light emitting device according to thesecond embodiment;

FIG. 8A to FIG. 8C are schematic views illustrating a semiconductorlight emitting device according to a third embodiment; and

FIG. 9 is an equivalent circuit diagram illustrating a semiconductorlight emitting device according to the third embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor light emitting deviceincludes a light emitting unit, a first conductive pillar, a secondconductive pillar, a sealing unit, a first terminal, and a secondterminal. The light emitting unit includes a first semiconductor layer,a light emitting layer, and a second semiconductor layer. The firstsemiconductor layer has a first conductivity type. The firstsemiconductor layer has a major surface including a first portion and asecond portion. The light emitting layer is provided on the firstportion. The second semiconductor layer has a second conductivity type.The second semiconductor layer is provided on the light emitting layer.The light emitting unit has a side face intersecting with the majorsurface. The first conductive pillar is provided on the second portionand extending along a first direction perpendicular to the majorsurface. The first conductive pillar has a side face along the firstdirection and is electrically connected to the first semiconductorlayer. The second conductive pillar is provided on the secondsemiconductor layer and extending along the first direction. The secondconductive pillar has a side face along the first direction and iselectrically connected to the second semiconductor layer. The sealingunit covers the side face of the light emitting unit, the side face ofthe first conductive pillar, and the side face of the second conductivepillar. The first terminal is provided on the first conductive pillarand on the sealing unit, and is electrically connected to the firstconductive pillar. The first terminal includes a first overlappingportion and a second overlapping portion. The first overlapping portionoverlaps with the light emitting unit. The second overlapping portiondoes not overlap with the light emitting unit and overlaps with thesealing unit when projected onto a plane parallel to the major surface.The second terminal is provided on the second conductive pillar and onthe sealing unit. The second terminal is apart from the first terminaland is electrically connected to the second conductive pillar. Thesecond terminal includes a third overlapping portion and a fourthoverlapping portion. The third overlapping portion overlaps with thelight emitting unit. The fourth overlapping portion does not overlapwith the light emitting unit and overlaps with the sealing unit whenprojected onto the plane.

According to another embodiment, a method is disclosed for manufacturinga semiconductor light emitting device. The method can include preparinga work piece including a support substrate and a plurality ofsemiconductor components arranged on a surface of the support substrate.Each of the semiconductor components includes a substrate unit, a lightemitting unit, a first conductive pillar, and a second conductivepillar. The light emitting unit is provided on the substrate unit. Thelight emitting unit includes a first semiconductor layer, a lightemitting layer, and a second semiconductor layer. The firstsemiconductor layer has a first conductivity type and provided on thesubstrate unit. The first semiconductor layer has a major surfaceincluding a first portion and a second portion. The light emitting layeris provided on the first portion. The second semiconductor layer has asecond conductivity type and provided on the light emitting layer. Thelight emitting unit has a side face intersecting with the major surface.The first conductive pillar is provided on the second portion andextending along a first direction perpendicular to the major surface.The first conductive pillar has a side face along the first directionand is electrically connected to the first semiconductor layer. Thesecond conductive pillar is provided on the second semiconductor layerand extending along the first direction. The second conductive pillarhas a side face along the first direction and is electrically connectedto the second semiconductor layer. The method can include forming aresin film on the semiconductor components and on the surface of thesupport substrate. The resin film covers the side face of the lightemitting unit, the side face of the first conductive pillar, and theside face of the second conductive pillar of each of the semiconductorcomponents. The method can include removing the support substrate fromthe semiconductor components and the resin film. The method can includeforming a plurality of concave portions in the resin film. The concaveportions is reflected the shape of the substrate units by removing eachof the substrate units of the semiconductor components. The method caninclude forming a wavelength conversion layer including a wavelengthconversion material by filling the plurality of concave portions with aresin material including the wavelength conversion material. Thewavelength conversion layer absorbs at least a part of a first lightbeing emitted from the light emitting unit, and emits a second lighthaving a peak wavelength being different from the peak wavelength of thefirst light. The method can include cutting the resin film between pairsof the semiconductor components.

Various embodiments will be described hereinafter with reference to theaccompanying drawings.

Note that the drawings are schematic or simplified illustrations andthat relationships between thicknesses and widths of parts andproportions in size between parts may differ from actual parts. Also,even where identical parts are depicted, mutual dimensions andproportions may be illustrated differently depending on the drawing.

Note that in the drawings and specification of this application, thesame numerals are applied to elements that have already appeared in thedrawings and been described, and repetitious detailed descriptions ofsuch elements are omitted.

First Embodiment

FIG. 1 is a schematic cross-sectional view illustrating a semiconductorlight emitting device according to a first embodiment. As illustrated inFIG. 1, a semiconductor light emitting device 110 according to thisembodiment includes a light emitting unit 15, a first conductive pillar41, a second conductive pillar 42, a sealing unit 44, a first terminal51, and a second terminal 52.

The light emitting unit 15 includes a first semiconductor layer 10, asecond semiconductor layer 20, and a light emitting layer 30.

The first semiconductor layer 10 has a first major surface (majorsurface) 10 a and a second major surface 10 b on a side opposite thefirst major surface 10 a. The second major surface 10 b is, for example,substantially parallel to the first major surface 10 a. The firstsemiconductor layer 10 has a first conductivity type. The first majorsurface 10 a includes a first portion 10 p opposing the secondsemiconductor layer 20 and a second portion 10 q that is not opposingthe second semiconductor layer 20. The first portion 10 p is juxtaposedwith the second portion 10 q.

The light emitting layer 30 is provided on the first portion 10 p of thefirst major surface 10 a. The second semiconductor layer 20 is providedon the light emitting layer 30. The light emitting layer 30 is providedbetween the first semiconductor layer 10 and the second semiconductorlayer 20. The second semiconductor layer 20 has a second conductivitytype. The second conductivity type is a different conductivity type fromthe first conductivity type. For example, the first conductivity type isn-type and the second conductivity type is p-type. However, thisembodiment is not limited thereto, and the first conductivity type maybe p-type and the second conductivity type may be n-type. Hereafter, acase in which the first conductivity type is n-type, and the secondconductivity type is p-type will be described.

The first semiconductor layer 10, the second semiconductor layer 20, andthe light emitting layer 30 include nitride semiconductors, for example.The first semiconductor layer 10 includes an n-type clad layer, forexample. The second semiconductor layer 20 includes a p-type clad layer,for example. The light emitting layer 30 has, for example, a singlequantum well (SQW) structure, or a multi quantum well (MQW) structure.

The light emitting layer 30 with a single quantum well structureincludes, for example, two barrier layers and a well layer providedbetween the two barrier layers. The light emitting layer 30 with a multiquantum well structure includes, for example, not less than threebarrier layers and a well layer provided between each pair of thebarrier layers. For the barrier layer, for example, a GaN compoundsemiconductor is used. For the well layer, for example, an InGaNcompound semiconductor is used. When the barrier layer includes In, thecomposition ratio of In in the barrier layer is less than thecomposition ratio of In in the well layer.

For example, a stacked crystal film that will form the light emittingunit 15 is formed by crystal growth of the first semiconductor layer 10,the light emitting layer 30, and the second semiconductor layer 20 inthat order on a substrate. A part of the stacked crystal film is removedfrom the second semiconductor layer 20 side until it reaches the firstsemiconductor layer 10. As a result, a part (the second portion 10 q) ofthe first semiconductor layer 10 is exposed, and the light emittinglayer 30 and the second semiconductor layer 20 remain on the firstportion 10 p. Thereby, the light emitting unit 15 is formed. The lightemitting unit 15 has a side face 15 s that intersects the first majorsurface 10 a. The second portion 10 q is juxtaposed with the firstportion 10 p in the X-Y plane. The light emitting unit 15 is apart fromthe substrate, for example, after crystal growth on the substrate.

Here, a first direction perpendicular to the first major surface 10 a(the direction from the first semiconductor layer 10 to the secondsemiconductor layer 20) is taken to be the Z-axis direction. Onedirection perpendicular to the Z-axis direction (one direction parallelto the first major surface 10 a) is taken to be the X-axis direction.The direction perpendicular to the Z-axis direction and the X-axisdirection (one other direction perpendicular to the one direction andparallel to the first major surface 10 a) is taken to be the Y-axisdirection. The Z-axis direction does not have to be strictlyperpendicular to the first major surface 10 a.

The thickness of the first semiconductor layer 10 (the thickness alongthe Z-axis direction) is, for example, not less than 1 μm and not morethan 10 μm. In this example, the thickness of the first semiconductorlayer 10 is, for example, 5 μm. The thickness of the secondsemiconductor layer 20 is, for example, not less than 5 nm and not morethan 300 nm. In this example, the thickness of the second semiconductorlayer 20 is, for example, 100 nm. The thickness of the light emittinglayer 30 is, for example, not less than 5 nm and not more than 100 nm.In this example, the thickness of the light emitting layer 30 is, forexample, 10 nm.

The first conductive pillar 41 is provided on the second portion 10 q.The first conductive pillar 41 extends along the Z-axis direction. Thefirst conductive pillar 41 has a side face 41 s that extends along theZ-axis direction. The first conductive pillar 41 has, for example, acircular prismatic or a rectangular prismatic shape. The firstconductive pillar 41 is electrically connected to the firstsemiconductor layer 10. The first conductive pillar 41, for example,contacts the second portion 10 q and is electrically continuous with thefirst semiconductor layer 10. An electrically conductive member such asan electrode or the like may be provided between the first semiconductorlayer 10 and the first conductive pillar 41.

The second conductive pillar 42 is provided on the second semiconductorlayer 20. The second conductive pillar 42 extends along the Z-axisdirection. The second conductive pillar 42 has a side face 42 s thatextends along the Z-axis direction. The second conductive pillar 42 has,for example, a circular prismatic or a rectangular prismatic shape. Thesecond conductive pillar 42 is electrically connected to the secondsemiconductor layer 20. The second conductive pillar 42, for example,contacts the second semiconductor layer 20 and is electricallycontinuous with the second semiconductor layer 20. An electricallyconductive member such as an electrode or the like may be providedbetween the second semiconductor layer 20 and the second conductivepillar 42.

A material having electrical conductivity is used in the firstconductive pillar 41 and the second conductive pillar 42. A metalmaterial such as copper or the like, for example, is used in the firstconductive pillar 41 and the second conductive pillar 42. The number ofthe first conductive pillar 41 and the second conductive pillar 42 isnot limited to one, but may be a plurality.

The sealing unit 44 covers the side face 15 s of the light emitting unit15, the side face 41 s of the first conductive pillar 41, and the sideface 42 s of the second conductive pillar 42. The sealing unit 44 allowsan end portion 41 a of the first conductive pillar 41 and an end portion42 a of the second conductive pillar 42 to be exposed. Of the two endportions of the prismatic first conductive pillar 41, the end portion 41a is on the opposite side to the side in contact with the firstsemiconductor layer 10. Of the two end portions of the prismatic secondconductive pillar 42, the end portion 42 a is on the opposite side tothe side in contact with the second semiconductor layer 20. In this way,the sealing unit 44 retains the light emitting unit 15, the firstconductive pillar 41, and the second conductive pillar 42. For example,the sealing unit 44 protects the light emitting unit 15, the firstconductive pillar 41, and the second conductive pillar 42. An insulatingresin such as epoxy resin or the like is used in the sealing unit 44.The sealing unit 44 can include, for example, a quartz filler, analumina filler or the like. As a result, the thermal conductivity of thesealing unit 44 is increased, and heat dissipation can be increased.

A wavelength conversion layer 46 is provided on the second major surface10 b of the first semiconductor layer 10. In other words, the firstsemiconductor layer 10 is provided on the wavelength conversion layer46. The wavelength conversion layer 46 covers, for example, the lightemitting unit 15 on the upper side of the second major surface 10 b. Thewavelength conversion layer 46 has a side face 46 s that intersects thefirst major surface 10 a. The wavelength conversion layer 46 absorbs,for example, at least a part of the luminescent light (first light) ofthe light emitting unit 15, and emits light (second light) whose peakwavelength is different from the peak wavelength of the luminescentlight. In other words, the wavelength conversion layer 46 converts thepeak wavelength of the light emitted from the light emitting unit 15.The wavelength conversion layer 46 may emit, for example, light with aplurality of peak wavelengths that is different from the peak wavelengthof the luminescent light. In this example, the sealing unit 44 furthercovers the side face 46 s of the wavelength conversion layer 46. Thesealing unit 44 also retains the wavelength conversion layer 46.

For the wavelength conversion layer 46, a phosphor layer may, forexample, be used. The phosphor layer may be formed by, for example,thermosetting a liquid transparent resin in which phosphor particleshave been dispersed. A material that has transmittivity with respect tothe luminescent light of the light emitting unit 15 and the lightemitted from the phosphor particles is used in the transparent resin.For example, a silicone resin, an acrylic resin, a fluid glass or thelike is used in the transparent resin. The wavelength conversion layer46 may be a stacked body of a plurality of phosphor layers withdifferent peak wavelength of emitted light. The luminescent light of thelight emitting unit 15 is, for example, ultraviolet light, violet light,or blue light, and the light emitted from the wavelength conversionlayer 46 is, for example, yellow light, red light, or green light. Thecombined light of the light emitted from the wavelength conversion layer46 and the luminescent light is, for example, substantially white light.The combined light may be, for example, yellow light, red light, greenlight, or blue light.

An insulating layer 16 is provided between the light emitting unit 15and the sealing unit 44. The insulating layer 16 is provided, forexample, covering the light emitting unit 15, except for the secondmajor surface 10 b that is covered by the wavelength conversion layer46, the portion in contact with the first conductive pillar 41, and theportion in contact with the second conductive pillar 42. Thereby, theinsulating layer 16 increases, for example, the insulation between thelight emitting unit 15 and the sealing unit 44. The insulating layer 16protects the light emitting unit 15 from, for example, impurities in thesealing unit 44, and the like.

Inorganic material such as, for example, SiO₂, SiN, phosphorous silicateglass (PSG), boron phosphorous silicate glass (BPSG), and the like isused in the insulating layer 16. Also, an organic material such as, forexample, light sensitive polyimide, benzocyclobutene, and the like canbe used as the insulating layer 16, or a stacked body of an inorganicfilm and an organic film can be used. The thickness of the insulatinglayer 16 is, for example, about 400 nm. To form the insulating layer 16,CVD, vapor deposition, or sputtering, and the like, can be used, forexample.

The first terminal 51 is provided on the first conductive pillar 41 andthe sealing unit 44. When projected onto a plane (the X-Y plane)parallel to the first major surface 10 a, the first terminal 51 has aportion 51 a (first overlapping portion) that overlaps with the lightemitting unit 15, and a portion 51 b (second overlapping portion) thatdoes not overlap with the light emitting unit 15 but does overlap withthe sealing unit 44. When viewed from the Z-axis direction, the portion51 b of the first terminal 51 extends on an outer side of the lightemitting unit 15. In this example, when viewed from the Z-axisdirection, the portion 51 b of the first terminal 51 extends on theouter side of the wavelength conversion layer 46. The length (the amountof projection from the light emitting unit 15) of the portion 51 b ofthe first terminal 51 along a direction perpendicular to the Z-axisdirection (for example, the X-axis direction) is, for example, not lessthan 100 μm and not more than 500 μm. The first terminal 51 iselectrically connected to the first conductive pillar 41. For example,the first terminal 51 is in contact with the end portion 41 a of thefirst conductive pillar 41 and electrically continuous with the firstconductive pillar 41.

The second terminal 52 is provided so as to be apart from the firstterminal 51, on the second conductive pillar 42 and the sealing unit 44.When projected onto the X-Y plane, the second terminal 52 has a portion52 a (third overlapping portion) that overlaps with the light emittingunit 15, and a portion 52 b (fourth overlapping portion) that does notoverlap with the light emitting unit 15 but does overlap with thesealing unit 44. When viewed from the Z-axis direction, the portion 52 bof the second terminal 52 extends on the outer side of the lightemitting unit 15. In this example, when viewed from the Z-axisdirection, the portion 52 b of the second terminal 52 extends on theouter side of the wavelength conversion layer 46. The length of theportion 52 b of the second terminal 52 along a direction perpendicularto the Z-axis direction is, for example, not less than 100 μm and notmore than 500 μm. The second terminal 52 is electrically connected tothe second conductive pillar 42. For example, the second terminal 52 isin contact with the end portion 42 a of the second conductive pillar 42and electrically continuous with the second conductive pillar 42.

The first terminal 51 and the second terminal 52 are used, for example,for electrically connecting the semiconductor light emitting device 110with external devices. In this example, the first terminal 51 is ann-side cathode, and the second terminal 52 is a p-side anode. When thesemiconductor light emitting device 110 is used, a voltage is appliedbetween the first terminal 51 and the second terminal 52, so that thefirst terminal 51 is negative and the second terminal 52 is positive. Asa result, a voltage in the forward direction is applied to the lightemitting unit 15, and light is emitted from the light emitting layer 30.A material having electrical conductivity such as, for example, a metalmaterial or the like is used in the first terminal 51 and the secondterminal 52. The first terminal 51 and the second terminal 52 may have,for example, a single layer structure using a single material, or astacked structure using a plurality of materials.

In the semiconductor light emitting device 110, the second major surface10 b of the first semiconductor layer 10 is a light extraction surface.In other words, in this example, light emitted from the light emittinglayer 30 is emitted to the outside of the semiconductor light emittingdevice 110 from the second major surface 10 b. For example, minuteirregularities may be formed on the second major surface 10 b byperforming a frosting process on the second major surface 10 b by a wetetching process, a dry etching process or the like. In this way, forexample, total reflection of the light emitted from the light emittinglayer 30 at the second major surface 10 b is suppressed, and the lightextraction efficiency of the semiconductor light emitting device 110 isincreased.

In the semiconductor light emitting device 110, the first terminal 51and the second terminal 52 have the portions 51 b and 52 b that are notoverlapped with the light emitting unit 15 but are overlapped with thesealing unit 44. As a result, it is possible to, for example, increasethe heat dissipation of the semiconductor light emitting device 110.Thereby, it is possible to suppress damage to the semiconductor lightemitting device 110 caused by heat, for example. Also, it is possible,for example, to make the area of the first terminal 51 and the secondterminal 52 be wider. As a result, it is possible, for example, toimprove the mountability of the semiconductor light emitting device 110.Thereby, it is possible, for example, to suppress defective connectionsof the semiconductor light emitting device 110 with external devices.Therefore, with the semiconductor light emitting device 110 according tothis embodiment, it is possible to improve the reliability.

Hereinafter, an example of a manufacturing method of the semiconductorlight emitting device 110 will be described.

FIGS. 2A to 2C, 3A to 3C, and 4A to 4D are schematic cross-sectionalviews illustrating a manufacturing method for a semiconductor lightemitting device according to the first embodiment.

As illustrated in FIG. 2A, a plurality of light emitting units 15 isformed on a surface 5 a of a growth-use substrate 5, for example.

To form the plurality of light emitting units 15, for example, a stackedbody is formed by stacking a film that will become the firstsemiconductor layer 10, a film that will become the light emitting layer30, and a film that will become the second semiconductor layer 20 inthat order. A part of the stacked body is removed by, for example, alithography process and an etching process. In this way, the pluralityof light emitting units 15 is formed on the surface 5 a.

A semiconductor substrate, for example, is used for the growth-usesubstrate 5. The semiconductor substrate may be n-type, p-type, or itmay be undoped. If undoped, for example, an intrinsic semiconductor with{111} planes is used in the semiconductor substrate. An undopedsemiconductor substrate may be doped to become p-type or n-type. In thisexample, a silicon substrate is used, for example, in the growth-usesubstrate 5. The growth-use substrate 5 may be, for example, a glasssubstrate such as sapphire glass or the like. To form the stacked body,for example, metal organic chemical vapor deposition (MOCVD) is used.For example, a crystal layer that includes a nitride semiconductor isepitaxially grown on the growth-use substrate 5. For example, a bufferlayer may be provided between the growth-use substrate 5 and the filmthat will become the first semiconductor layer 10. The buffer layer hasthe function of lattice matching with the growth-use substrate 5 and thestress relief.

As illustrated in FIG. 2B, an insulating film 16 f that will form theinsulating layer 16 is formed on the surface 5 a of the growth-usesubstrate 5 and the plurality of light emitting units 15 by, forexample, a film forming process, a lithography process, and an etchingprocess. The insulating film 16 f is provided with a plurality ofapertures 16 a that allows a part of the first semiconductor layer 10 tobe exposed, and a plurality of apertures 16 b that allows a part of thesecond semiconductor layer 20 to be exposed. The apertures 16 a are usedto electrically connect the first semiconductor layer 10 and the firstconductive pillar 41. The apertures 16 b are used to electricallyconnect the second semiconductor layer 20 and the second conductivepillar 42.

As illustrated in FIG. 2C, the first conductive pillar 41 is formed oneach first semiconductor layer 10 of the plurality of light emittingunits 15, and the second conductive pillar 42 is formed on each secondsemiconductor layer 20 of the plurality of light emitting units 15, byperforming, for example, a film forming process, a lithography process,an etching process, a process of embedding a conductive material, andthe like. The first conductive pillar 41 and the second conductivepillar 42 may be formed at the same time, or they may be formedseparately.

For example, the first conductive pillar 41 and the second conductivepillar 42 may be contacted and made electrically continuous with aprobe, and the peak wavelength of the luminescent light of each of theplurality of light emitting units 15 that is formed on the growth-usesubstrate 5 measured from the light emitted from the light emittingunits 15. The peak wavelengths of the luminescent light of the pluralityof light emitting units 15 are not necessarily uniform. For example, ifthe growth-use substrate 5 is a circular plate shaped semiconductorwafer, the peak wavelength of the light emitting units 15 located closeto the center of the wafer is short, and the peak wavelength becomesgradually longer towards the periphery of the wafer, exhibiting aconcentric circular distribution.

If the distribution of the peak wavelengths of the luminescent light ofthe plurality of light emitting units 15 is known in advance,measurement of the peak wavelengths may be omitted. The distribution ofpeak wavelengths of the luminescent light of the plurality of lightemitting units 15 can be obtained empirically, for example, byrepeatedly manufacturing the same type of semiconductor light emittingdevice 110. For example, it can be obtained by simulation. For example,it can be obtained in advance by optical measurement by thephotoluminescence (PL) method.

By cutting the growth-use substrate 5 along a first dicing line DL1, anddividing the growth-use substrate 5 into each of the plurality of lightemitting units 15, a plurality of semiconductor components 100 of eachof the plurality of light emitting units 15 is formed (see FIG. 3A toFIG. 3C).

In the semiconductor component 100, the insulating layer 16 is formedfrom the insulating film 16 f. Also, in the semiconductor component 100,a substrate unit 5 w is formed from the growth-use substrate 5. Thesemiconductor component 100 includes the substrate unit 5 w, the lightemitting unit 15, the first conductive pillar 41, and the secondconductive pillar 42. The light emitting unit 15 is provided on thesubstrate unit 5 w. The light emitting unit 15 includes the firstsemiconductor layer 10, the light emitting layer 30, and the secondsemiconductor layer 20. The first semiconductor layer 10 is provided onthe substrate unit 5 w, and has the first major surface 10 a thatincludes the first portion 10 p and the second portion 10 q, and has thefirst conductivity type. The light emitting layer 30 is provided on thefirst portion 10 p. The second semiconductor layer 20 is provided on thelight emitting layer 30, and has the second conductivity type. The firstconductive pillar 41 is provided on the second portion 10 q, extendsalong the first direction perpendicular to the first major surface 10 a,and is electrically connected to the first semiconductor layer 10. Thesecond conductive pillar 42 is provided on the second semiconductorlayer 20, extends along the first direction, and is electricallyconnected to the second semiconductor layer 20.

The plurality of semiconductor components 100 is divided into groups ofeach peak wavelength of the luminescent light of the light emittingunits 15, for example. The range of peak wavelength (the differencebetween the maximum value and the minimum value) in one group is, forexample, not more than 2 nm. The data on peak wavelength of theluminescent light used for dividing into groups may be data obtained bymeasurement, data obtained empirically, data obtained by simulation, ordata obtained by optical measurement using the PL method.

As illustrated in FIG. 3A, a pressure sensitive adhesion layer 7 isformed on a surface 6 a of a support substrate 6.

The plurality of semiconductor components 100 is arranged on thepressure sensitive adhesion layer 7, and fixed to the surface 6 a of thesupport substrate 6 using the pressure sensitive adhesion layer 7. Inthis way, a work piece 102 is formed. Thereby, the work piece 102 isprepared.

A silicon wafer, a glass substrate, a quartz substrate, a ceramicsubstrate, or a polytetrafluoroethylene substrate or the like, forexample, is used as the support substrate 6. An arbitrary material thatcan withstand, for example, degeneration, decomposition, warping, andthe like due to the curing temperature of the resin for forming thesealing unit 44 may be used in the support substrate 6. The shape of thesupport substrate 6 when viewed in the Z-axis direction may be acircular shape or may be a polygonal shape. A pressure sensitiveadhesive or a pressure sensitive sheet that includes a pressuresensitive adhesive, for example, may be used in the pressure sensitiveadhesion layer 7. The pressure sensitive adhesion layer 7 is formed, forexample, by applying pressure sensitive adhesive, or laying a pressuresensitive sheet. The spin coating method, a printing method, or thelike, for example, is used for applying the pressure sensitive adhesive.The roller lamination method or the like, for example, is used to laythe pressure sensitive sheet. An acrylic pressure sensitive adhesive, arubber pressure sensitive adhesive, or the like, for example, is used asthe pressure sensitive adhesive.

The plurality of semiconductor components 100 is arranged on the surface6 a of the support substrate 6 in accordance with the peak wavelength ofthe light emitted from the light emitting units 15. For example, aplurality of semiconductor components 100 belonging to a single group isbonded to the support substrate 6. In other words, semiconductorcomponents 100 whose peak wavelengths of luminescent light are close arebonded to the support substrate 6. The semiconductor components 100 of asingle group bonded to the support substrate 6 may be, for example,semiconductor components 100 formed from a single growth-use substrate5, or may be semiconductor components 100 formed from a plurality ofgrowth-use substrates 5. Semiconductor components 100 from a pluralityof groups may, for example, be bonded to the support substrate dividedinto each area.

As illustrated in FIG. 3B, a resin film 44 f that will become thesealing unit 44 is formed on each of the plurality of semiconductorcomponents 100 and on the surface 6 a of the support substrate 6 (on thepressure sensitive adhesion layer 7). The resin film 44 f covers theside face 15 s of the light emitting unit 15, the side face 41 s of thefirst conductive pillar 41, and the side face 42 s of the secondconductive pillar 42 of each of the plurality of semiconductorcomponents 100. In this example, the resin film 44 f also covers the endportion 41 a of the first conductive pillar 41, and the end portion 42 aof the second conductive pillar 42 of each of the plurality ofsemiconductor components 100. To form the resin film 44 f, for example,the application method is used.

For example, after the resin film 44 f has been applied, the resin film44 f is cured.

As illustrated in FIG. 3C, the end portion 41 a of the first conductivepillar 41 and the end portion 42 a of the second conductive pillar 42are exposed by, for example, grinding away a part of the resin film 44f, by a grinding process, wet etching, dry etching, or the like.

As illustrated in FIG. 4A, the support substrate 6 is removed from theplurality of semiconductor components 100 and the resin film 44 f, forexample. The support substrate 6 is removed by, for example, reducingthe adhesive force of the pressure sensitive adhesion layer 7. Theadhesive force of the pressure sensitive adhesion layer 7 is reduced by,for example, irradiating the pressure sensitive adhesion layer 7 fromthe support substrate 6 side with ultraviolet light, or by heating thework piece 102.

As illustrated in FIG. 4B, each substrate unit 5 w is removed from theplurality of semiconductor components 100 by, for example, etching orthe like. In this way, a plurality of concave portions 45 that reflectthe shape of the substrate units 5 w is formed on a first surface 44 qof the resin film 44 f.

As illustrated in FIG. 4C, on a second surface 44 p of the resin film 44f, conductive film 50 that will become the first terminal 51 and thesecond terminal 52 is formed. For example, by patterning the conductivefilm 50 by, for example, a lithography process and an etching process,the first terminal 51 and the second terminal 52 are formed from theconductive film 50. At that time, the first terminal 51 is provided onthe first conductive pillar 41 and on the resin film 44 f. The secondterminal 52 is provided on the second conductive pillar 42 and on theresin film 44 f.

As illustrated in FIG. 4D, each of the plurality of concave portions 45is filled with, for example, a resin material RM that will become thewavelength conversion layer 46 (resin material RM that includes awavelength conversion material). In this way, each of the wavelengthconversion layers 46 of the plurality of semiconductor components 100 isformed. For example, each of the plurality of concave portions 45 isfilled with a liquid transparent resin in which phosphor particles aredispersed. In this way, a phosphor layer is formed as the wavelengthconversion layer 46. In this example, the wavelength conversion materialis, for example, phosphor particles. The resin film 44 f is cut alongsecond dicing lines DL2. In other words, the resin film 44 f is cutbetween the plurality of semiconductor components 100. In this way, theplurality of semiconductor components 100 is separated. The firstterminal 51 and the second terminal 52 may also be formed by cutting theconductive film 50, when the plurality of semiconductor components 100is separated by dicing, for example.

Thereby, a semiconductor light emitting device 110 is completed.

In this example, the plurality of semiconductor components 100 isrearranged on the surface 6 a of the support substrate 6 in accordancewith the peak wavelength of the light emitted from the light emittingunits 15. In this way, it is possible to, for example, make thechromaticity of the plurality of semiconductor light emitting devices110 uniform. In this way, in addition to the reliability regardingheating and the reliability regarding mounting of the semiconductorlight emitting device 110, for example, it is possible to improve thereliability regarding the luminescent color of the semiconductor lightemitting device 110.

For example, after the support substrate 6 has been removed (FIG. 4A),the first surface 44 q of the resin film 44 f and a part of each of thesubstrate units 5 w of the plurality of semiconductor components 100 areground by a grinding process, wet etching, dry etching, or the like, andthe thicknesses of the resin film 44 f and the plurality of substrateunits 5 w are adjusted. In other words, by adjusting the depth of theconcave portions 45, the thickness of the wavelength conversion layer 46is adjusted. For example, the thickness of the wavelength conversionlayer 46 is changed in accordance with the peak wavelength of theluminescent light of the light emitting unit 15. In this way, it ispossible to make the chromaticity of the semiconductor light emittingdevices 110 uniform. For example, the chromaticity of the semiconductorlight emitting devices 110 may be made uniform by changing thecomposition of the wavelength conversion layer 46 in accordance with thepeak wavelength of the luminescent light of the light emitting units 15.

FIG. 5 is a flowchart illustrating the method for manufacturing asemiconductor light emitting device according to the first embodiment.

As illustrated in FIG. 5, this manufacturing method includes a step S110of preparing the work piece 102; a step S120 of forming the resin film44 f; a step S130 of removing the support substrate 6; a step S140 offorming the plurality of concave portions 45; and a step S150 of formingthe wavelength conversion layer 46.

The step S110 of preparing the work piece 102 includes, for example, astep S111 of forming the plurality of light emitting units 15; a stepS112 of forming the first conductive pillar 41 and the second conductivepillar 42; a step S113 of forming the plurality of semiconductorcomponents 100; and a step S114 of arranging the plurality ofsemiconductor components 100 on the support substrate 6.

Preparing the work piece 102 includes, for example, forming theplurality of semiconductor components 100, and arranging each of thesemiconductor components 100 on the support substrate 6 to form the workpiece 102. Preparing the work piece 102 includes, for example, puttingthe work piece 102 that has been formed into the state in which it canbe used in the manufacture of the semiconductor light emitting device110. The state in which it can be used includes, for example, removing aprotective film that covers and protects the work piece 102, and settingthe work piece 102 in a manufacturing device.

In step S110, for example, the processing described in relation to FIG.2A through FIG. 2C is performed. In step S120, for example, theprocessing described in relation to FIG. 3B is performed. In step S130,for example, the processing described in relation to FIG. 4A isperformed. In step S140, for example, the processing described inrelation to FIG. 4B is performed. In step S150, for example, theprocessing described in relation to FIG. 4D is performed.

In this way, the semiconductor light emitting device 110 with highreliability is manufactured.

Second Embodiment

FIG. 6A and FIG. 6B are schematic views illustrating a semiconductorlight emitting device according to a second embodiment.

FIG. 6A is a schematic cross-sectional view. FIG. 6B is a schematic planview. FIG. 6A schematically illustrates the cross-section at the lineA1-A2 in FIG. 6B.

As illustrated in FIG. 6A and FIG. 6B, a semiconductor light emittingdevice 120 further includes a first metal edge portion 61 and a secondmetal edge portion 62.

The sealing unit 44 has a side face 44 s along the Z-axis direction. Theside face 44 s includes a first side face 44 a, and a second side face44 b that is different from the first side face 44 a.

The first metal edge portion 61 covers the first side face 44 a. Thefirst metal edge portion 61 is electrically connected to the firstterminal 51. The first metal edge portion 61 is in contact with aportion 51 b of the first terminal 51. The second metal edge portion 62is provided so as to be apart from the first metal edge portion 61. Thesecond metal edge portion 62 covers the second side face 44 b. Thesecond metal edge portion 62 is, for example, opposed to the first metaledge portion 61 in the X-axis direction (the opposing direction). Thesecond metal edge portion 62 is electrically connected to the secondterminal 52. The second metal edge portion 62 is in contact with theportion 52 b of the second terminal 52. For example, copper, aluminum orthe like is used in the first metal edge portion 61 and the second metaledge portion 62.

In the semiconductor light emitting device 120, heat dissipation can befurther increased by the first metal edge portion 61 and the secondmetal edge portion 62, for example. Also, for example, a part of thesolder that is applied to the first terminal 51 and the second terminal52 rises up to the first metal edge portion 61 and the second metal edgeportion 62, so it is possible to further improve the mountability.Therefore, in the semiconductor light emitting device 120, it ispossible to further increase the reliability.

Also, in the semiconductor light emitting device 120, it is possible toadjust the orientation of the luminescent light using the first metaledge portion 61 and the second metal edge portion 62. At this time, theshape, size, and thickness of the first metal edge portion 61 and thesecond metal edge portion 62 may be designed from this viewpoint. Forexample, it is possible to adjust the orientation of the luminescentlight by varying the distance between the first metal edge portion 61and the side face 46 s of the wavelength conversion layer 46, or thedistance between the second metal edge portion 62 and the side face 46 sof the wavelength conversion layer 46.

FIG. 7A and FIG. 7B are schematic views illustrating the method formanufacturing a semiconductor light emitting device according to thesecond embodiment.

FIG. 7A is a schematic cross-sectional view. FIG. 7B is a schematic planview. FIG. 7A schematically illustrates the cross-section at the lineB1-B2 in FIG. 7B.

As illustrated in FIG. 7A and FIG. 7B, when manufacturing thesemiconductor light emitting device 120, for example, a plurality ofmetal frames 64 is provided on the work piece 102. In this example, eachof the plurality of metal frames 64 extends along the Y-axis direction.Each of the plurality of metal frames 64 is provided between the pairsof semiconductor components 100 that are closest in the X-axisdirection, for example. Each of the plurality of metal frames 64 isprovided on the surface 6 a of the support substrate 6 before formingthe resin film 44 f.

For example, the plurality of semiconductor components 100 is arrangedon the surface 6 a of the support substrate 6, and the plurality ofmetal frames 64 is provided on the surface 6 a. Thereafter, the resinfilm 44 f is formed, the support substrate 6 is removed, the pluralityof concave portions 45 is formed, the conductive film 50 is formed, andthe wavelength conversion layer 46 is formed, the same as for thesemiconductor light emitting device 110. Then, for example, dicing isperformed along third dicing lines DL3 that are set within the metalframes 64 in the X-axis direction, and the resin film 44 f and theplurality of metal frames 64 is divided into each of the plurality ofsemiconductor components 100. In this way, one part of the divided metalframe 64 becomes the first metal edge portion 61, and the other becomesthe second metal edge portion 62, and the semiconductor light emittingdevice 120 is completed.

Third Embodiment

FIG. 8A to FIG. 8C are schematic views illustrating a semiconductorlight emitting device according to a third embodiment.

FIG. 8A and FIG. 8B are schematic cross-sectional views. FIG. 8C is aschematic plan view. FIG. 8A schematically illustrates the cross-sectionat the line C1-C2 in FIG. 8C. FIG. 8B schematically illustrates thecross-section at the line D1-D2 in FIG. 8C.

As illustrated in FIG. 8A through FIG. 8C, a semiconductor lightemitting device 130 further includes a rectification element 70.

The rectification element 70 includes a first electrode 71, a secondelectrode 72, and a rectification unit 73.

One edge 73 a of the rectification unit 73 is electrically connected tothe first terminal 51. One other edge 73 b of the rectification unit 73is electrically connected to the second terminal 52. The rectificationunit 73 outputs a current in one direction (for example, the forwarddirection) between the first electrode 71 (one edge 71 a) and the secondelectrode 72 (other edge 73 b). The rectification unit 73 facilitatescurrent flow in one direction between the first electrode 71 and thesecond electrode 72, and hinders current flow in the other direction(for example, the reverse direction) between the first electrode 71 andthe second electrode 72. For example, the resistance in the forwarddirection (first rectification direction) between the one edge 73 a andthe other edge 73 b is less than the resistance in the reverse direction(second rectification direction) between the one edge 71 a and the otheredge 73. For example, in the rectification unit 73, current does notflow in the reverse direction. Also, in the rectification unit 73,current that flows in the reverse direction is less than current thatflows in the forward direction. In this example, current flows, forexample, in the direction from the first electrode 71 to the secondelectrode 72.

The first electrode 71 is electrically connected to the first metal edgeportion 61. In this way, the first electrode 71 is electricallyconnected to the first semiconductor layer 10 via the first metal edgeportion 61, the first terminal 51, and the first conductive pillar 41.The second electrode 72 is electrically connected to the second metaledge portion 62. In this way, the second electrode 72 is electricallyconnected to the second semiconductor layer 20 via the second metal edgeportion 62, the second terminal 52, and the second conductive pillar 42.

The first metal edge portion 61 includes a first main body part 61 a(first extending part) that extends along the Y-axis direction(extension direction), a first projection 61 b (second extending part)that extends along the X-axis direction from one end of the first mainbody part 61 a towards the second metal edge portion 62, and a secondprojection 61 c that extends along the X-axis direction from another endof the first main body part 61 a towards the second metal edge portion62.

The second metal edge portion 62 includes a second main body part 62 a(third extending part) that extends along the Y-axis direction, a thirdprojection 62 b (fourth extending part) that extends along the X-axisdirection from one end of the second main body part 62 a towards thefirst metal edge portion 61 and that is opposed to the first projection61 b, and a fourth projection 62 c that extends along the X-axisdirection from another end of the second main body part 62 a towards thefirst metal edge portion 61 and that is opposed to the second projection61 c. A predetermined gap is provided between the first projection 61 band the third projection 62 b. A predetermined gap is provided betweenthe second projection 61 c and the fourth projection 62 c.

The rectification unit 73 is, for example, a cuboid shape. The firstelectrode 71 is provided on one face 73 p of the rectification unit 73.The second electrode 72 is provided on the face 73 q of therectification unit 73 that is on the opposite side to the firstelectrode 71. The distance between an edge of the first electrode 71 andan edge of the second electrode 72 is substantially the same as thedistance of the gap between the first projection 61 b and the thirdprojection 62 b. The rectification element 70 is disposed, for example,between an edge of the first projection 61 b and an edge of the thirdprojection 62 b. The rectification element 70 is fitted, for example,between an edge of the first projection 61 b and an edge of the thirdprojection 62 b. The first projection 61 b is in contact with the firstelectrode 71 of the rectification element 70, for example, so the firstelectrode 71 is electrically connected to the first metal edge portion61. The third projection 62 b is in contact with the second electrode 72of the rectification element 70, for example, so the second electrode 72is electrically connected to the second metal edge portion 62. Therectification element 70 may be provided between the second projection61 c and the fourth projection 62 c. Also, the rectification element 70is covered and retained by, for example, the sealing unit 44. The firstelectrode 71 and the second electrode 72 are covered by, for example,the sealing unit 44. In this way, the exposure of the first electrode 71and the second electrode 72 to the outside is suppressed.

FIG. 9 is an equivalent circuit diagram illustrating a semiconductorlight emitting device according to the third embodiment.

As illustrated in FIG. 9, the light emitting unit 15 is, for example, alight emitting diode. The rectification unit 73 is a diode, for example.In the semiconductor light emitting device 130, the rectification unit73 is electrically connected as described above, and is connected inparallel to the light emitting unit 15 in the reverse direction.

The forward voltage drop of the rectification unit 73 is, for example,less than the maximum allowable reverse voltage (hereafter referred toas the reverse withstand voltage) of the light emitting unit 15. Also,the reverse withstand voltage of the rectification unit 73 is greaterthan the forward voltage applied to the light emitting unit 15 duringoperation.

The rectification unit 73 conducts current when an excessive voltage (avoltage that exceeds the reverse withstand voltage of the light emittingunit 15) is applied in the reverse direction to the semiconductor lightemitting device 130 due to electrostatic discharge (ESD) or the like.When the rectification unit 73 conducts, the maximum value of thevoltage in the reverse direction applied to the light emitting unit 15reduces to the forward direction voltage of the rectification unit 73.In this way, in the semiconductor light emitting device 130, the lightemitting unit 15 is protected from excessive voltages in the reversedirection. Therefore, in the semiconductor light emitting device 130,the reliability can be further increased.

The rectification unit 73 may be, for example, a Zener diode. In thisway, for example, it is possible to protect the light emitting unit 15from excessive voltages in the forward direction, as well as fromexcessive voltages in the reverse direction. In this example, the firstmetal edge portion 61 and the second metal edge portion 62 were used asthe wiring for the light emitting unit 15 and the rectification unit 73,but the method of wiring the light emitting unit 15 and therectification unit 73 is not limited to this, and any method may beused.

According to this embodiment, a highly reliable semiconductor lightemitting device and method for manufacturing the same can be provided.

Note that in this specification, the term, “nitride semiconductor”includes semiconductors of all compositions wherein compositionproportions of x, y, and z in the formula B_(x)In_(y)Al_(z)Ga_(1-x-y-z)Nfall within the respective ranges of 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≦1.Furthermore, with the formula described above, “nitride semiconductors”shall also be understood to include semiconductors further includinggroup V elements other than N (nitrogen), semiconductors furtherincluding various elements added to control various physical propertiessuch as conductivity type and the like, and semiconductors furtherincluding various elements that are included unintentionally.

In the specification of the application, “perpendicular” and “parallel”refer to not only strictly perpendicular and strictly parallel but alsoinclude, for example, the fluctuation due to manufacturing processes,etc. It is sufficient to be substantially perpendicular andsubstantially parallel.

Embodiments of the invention with reference to examples were describedabove. However, the embodiments of the invention are not limited tothese examples. For example, if a person with ordinary skill in the artto which the invention pertains selects as appropriate each element fromthe publicly-known range for the specific configuration of the firstsemiconductor layers, the second semiconductor layers, the lightemitting layers, the light emitting units, the first conductive pillars,the second conductive pillars, the sealing units, the first terminals,the second terminals, the first metal edge portions, the second metaledge portions, the rectification units, the rectification elements, thesupport substrates, the semiconductor components, the process bodies,the resin films, the wavelength conversion layers, the growth-usesubstrates, and the like, that are included in the semiconductor lightemitting device, and implements the invention in the same way, it isincluded within the invention as long as the same effect can beobtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor light emitting devices and methods formanufacturing the same practicable by an appropriate design modificationby one skilled in the art based on the semiconductor light emittingdevices and methods for manufacturing the same described above asembodiments of the invention also are within the scope of the inventionto the extent that the spirit of the invention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor light emitting device,comprising: a light emitting unit including a first semiconductor layer,a light emitting layer, and a second semiconductor layer, the firstsemiconductor layer having a first conductivity type, and having a majorsurface including a first portion and a second portion, the lightemitting layer provided on the first portion, the second semiconductorlayer having a second conductivity type and provided on the lightemitting layer, the light emitting unit having a side face intersectingwith the major surface; a first conductive pillar provided on the secondportion and extending along a first direction perpendicular to the majorsurface, the first conductive pillar having a side face along the firstdirection and being electrically connected to the first semiconductorlayer; a second conductive pillar provided on the second semiconductorlayer and extending along the first direction, the second conductivepillar having a side face along the first direction and beingelectrically connected to the second semiconductor layer; a sealing unitcovering the side face of the light emitting unit, the side face of thefirst conductive pillar, and the side face of the second conductivepillar; a first terminal provided on the first conductive pillar and onthe sealing unit, and being electrically connected to the firstconductive pillar, the first terminal including a first overlappingportion and a second overlapping portion, the first overlapping portionoverlapping with the light emitting unit, the second overlapping portionnot overlapping with the light emitting unit and overlapping with thesealing unit when projected onto a plane parallel to the major surface;and a second terminal provided on the second conductive pillar and onthe sealing unit, the second terminal being apart from the firstterminal and being electrically connected to the second conductivepillar, the second terminal including a third overlapping portionoverlapping with the light emitting unit and a fourth overlappingportion not overlapping with the light emitting unit and overlappingwith the sealing unit when projected onto the plane.
 2. The deviceaccording to claim 1, further comprising a first metal edge portion, anda second metal edge portion being apart from the first metal edgeportion, the sealing unit has a side face along the first direction, theside face of the sealing unit includes a first side face portion and asecond side face portion being different from the first side faceportion, the first metal edge portion covers the first side face portionand is electrically connected to the first terminal, and the secondmetal edge portion covers the second side face portion and iselectrically connected to the second terminal.
 3. The device accordingto claim 2, wherein the first metal edge portion contacts the secondoverlapping portion, and the second metal edge portion contacts thefourth overlapping portion.
 4. The device according to claim 1, furthercomprising a rectification element including a rectification unit, oneend of the rectification unit is electrically connected to the firstterminal, and one other end of the rectification unit is electricallyconnected to the second terminal.
 5. The device according to claim 4,wherein the resistance in a first rectification direction between theone end and the one other end is less than the resistance in a secondrectification direction opposing to the first rectification directionbetween the one end and the one other end, the light emitting unit has aforward direction, and light is emitted from the light emitting layer inthe forward direction, the rectification unit is connected in parallelwith the light emitting unit, and the first rectification direction isthe opposite to the forward direction.
 6. The device according to claim5, wherein a voltage drop of the rectification unit in the firstrectification direction is less than an allowable voltage in the reversedirection of the light emitting unit.
 7. The device according to claim4, wherein the rectification element is covered by the sealing unit. 8.The device according to claim 4, further comprising a first metal edgeportion, and a second metal edge portion being apart from the firstmetal edge portion, the sealing unit has a side face along the firstdirection, the side face of the sealing unit includes a first side faceportion and a second side face portion being different from the firstside face portion, the first metal edge portion covers the first sideface portion and is electrically connected to the first terminal, thesecond metal edge portion covers the second side face portion and iselectrically connected to the second terminal, the second metal edgeportion is opposed to the first metal edge portion in an opposingdirection being parallel to the major surface, the first metal edgeportion includes a first extending part extending along an extensiondirection, the extension direction is parallel to the major surface andis different from the opposing direction, and a second extending partextending along the opposing direction from one end of the firstextending part towards the second metal edge portion, the second metaledge portion includes a third extending part extending along theextension direction, and a fourth extending part extending along theopposing direction from one end of the third extending part towards thesecond extending part, and the rectification unit is disposed betweenthe second extending part and the fourth extending part.
 9. The deviceaccording to claim 8, wherein the rectification element further includesa first electrode electrically connected to either one end or the oneother end of the rectification unit and contacts the second extendingpart, and a second electrode electrically connected to the other ofeither one end or the one other end of the rectification unit andcontacts the fourth extending part.
 10. The device according to claim 1,further comprising a wavelength conversion layer having a side faceintersecting with the major surface, the first semiconductor layer isprovided on the wavelength conversion layer, and the sealing unit alsocovers the side face of the wavelength conversion layer.
 11. The deviceaccording to claim 1, further comprising an insulating layer providedbetween the light emitting unit and the sealing unit.
 12. The deviceaccording to claim 1, wherein the first terminal contacts the firstconductive pillar, and the second terminal contacts the secondconductive pillar.
 13. A method for manufacturing a semiconductor lightemitting device, comprising: preparing a work piece including a supportsubstrate and a plurality of semiconductor components arranged on asurface of the support substrate, each of the semiconductor componentsincluding a substrate unit, a light emitting unit provided on thesubstrate unit, the light emitting unit including a first semiconductorlayer, a light emitting layer, and a second semiconductor layer, thefirst semiconductor layer having a first conductivity type and providedon the substrate unit, the first semiconductor layer having a majorsurface including a first portion and a second portion, the lightemitting layer provided on the first portion, the second semiconductorlayer having a second conductivity type and provided on the lightemitting layer, the light emitting unit having a side face intersectingwith the major surface, a first conductive pillar provided on the secondportion and extending along a first direction perpendicular to the majorsurface, the first conductive pillar having a side face along the firstdirection and being electrically connected to the first semiconductorlayer, and a second conductive pillar provided on the secondsemiconductor layer and extending along the first direction, the secondconductive pillar having a side face along the first direction and beingelectrically connected to the second semiconductor layer; forming aresin film on the semiconductor components and on the surface of thesupport substrate, the resin film covering the side face of the lightemitting unit, the side face of the first conductive pillar, and theside face of the second conductive pillar of each of the semiconductorcomponents; removing the support substrate from the semiconductorcomponents and the resin film; forming a plurality of concave portionsin the resin film, the concave portions reflected the shape of thesubstrate units by removing each of the substrate units of thesemiconductor components; forming a wavelength conversion layerincluding a wavelength conversion material by filling the concaveportions with a resin material including the wavelength conversionmaterial, the wavelength conversion layer absorbing at least a part of afirst light being emitted from the light emitting unit, and emitting asecond light having a peak wavelength being different from the peakwavelength of the first light; and cutting the resin film between pairsof the semiconductor components.
 14. The method according to claim 13,wherein the process of preparing the work piece includes arranging thesemiconductor components on the support substrate in accordance with thepeak wavelength of the first light emitted from the light emitting unit.15. The method according to claim 14, wherein in the process ofpreparing the work piece, the difference in the maximum value and theminimum value of the peak wavelength of the semiconductor componentsarranged on the support substrate is not more than 2 nm.
 16. The methodaccording to claim 14, wherein the process of arranging thesemiconductor components on the support substrate includes forming apressure sensitive adhesion layer on the support substrate, and fixingthe semiconductor components on the support substrate using the pressuresensitive adhesion layer, and the process of removing the supportsubstrate includes reducing the pressure sensitive adhesive force of thepressure sensitive adhesion layer.
 17. The method according to claim 13,wherein the process of preparing the work piece further includes formingplurality of the light emitting units on a growth-use substrate, formingthe first conductive pillar on the second portion of each of the firstsemiconductor layers of the light emitting units, and forming the secondconductive pillar on each of the second semiconductor layers of thelight emitting units, and forming the semiconductor components bycutting the growth-use substrate, and dividing the growth-use substrateinto each of the light emitting units.
 18. The method according to claim17, wherein the process of preparing the work piece further includesmeasuring the peak wavelength of the luminescent light of each of thelight emitting units.
 19. The method according to claim 13, furthercomprising forming a conductive film on another surface of the resinfilm and forming a first terminal and a second terminal from theconductive film, wherein the first terminal is provided on the firstconductive pillar and on the resin film, and the first terminal iselectrically connected to the first conductive pillar, and the secondterminal is apart from the first terminal, the second terminal isprovided on the second conductive pillar and the resin film, and thesecond terminal is electrically connected to the second conductivepillar.
 20. The method according to claim 13, wherein the semiconductorcomponents is arranged in one direction parallel to the major surface,and arranged in one other direction parallel to the major surface andperpendicular to the one direction, the work piece further includes aplurality of metal frames extending along the one other direction,provided between each pair of semiconductor components being closest inthe one direction, and the process of cutting the resin film betweenpairs of the semiconductor components includes cutting each of the metalframes along a line set in the one direction on the metal frame.